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| SEMICONDUCTOR TECHNICAL DATA LOW VOLTAGE HIGH SPEED SWITCHING. FEATURES Low Forward Voltage : VF(2)=0.42(Typ.) Small Package : USC. CATHODE MARK B 1 KDR728 SCHOTTKY BARRIER TYPE DIODE G K A H E 2 D J C I MAXIMUM RATING (Ta=25 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range pad dimension of 4 4mm. ) SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 30 30 150 30 200 200* 125 -55 125 UNIT V V mA mA mA mW 1. ANODE 2. CATHODE M M DIM A B C D E F G H I J K L M MILLIMETERS _ 2.50 + 0.1 _ 1.25 + 0.05 _ 0.90 + 0.05 0.30+0.06/-0.04 _ 1.70 + 0.05 MIN 0.17 _ 0.126 + 0.03 0~0.1 1.0 MAX _ 0.15 + 0.05 _ 0.4 + 0.05 2 +4/-2 4~6 USC * : Mounted on a glass epoxy circuit board of 20 20mm, Marking Type Name UT ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Forward Voltage Reverse Current Total Capacitance VF(1) VF(2) IR CT ) TEST CONDITION IF=1mA IF=30mA VR=30V VR=1V, f=1MHz MIN. TYP. 0.3 0.42 6.5 MAX. 0.4 0.55 300 UNIT V A pF SYMBOL 2003. 7. 8 Revision No : 3 F L 1/2 KDR728 I F - VF 10 2 FORWARD CURRENT I F (mA) 10 1 10 -1 10 -2 10 -3 10 -4 0 0.1 0.2 0.3 0.4 0.5 FORWARD VOLTAGE VF (V) Ta=25 C IR 10 REVERSE CURRENT I R (A) Ta=25 C - VR 1 10 -1 10 -2 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) C T - VR TERMINAL CAPACITANCE C T (pF) 10 2 f=1MHz Ta=25 C 10 1 0 5 10 15 20 25 30 REVERSE VOLTAGE VR (V) 2003. 7. 8 Revision No : 3 2/2 |
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